hexfet ? power mosfet pd -91859 fifth generation hexfets from international rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. this benefit, combined with the fast switching speed and ruggedized device design that hexfet power mosfets are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. the so-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. with these improvements, multiple devices can be used in an application with dramatically reduced board space. the package is designed for vapor phase, infra red, or wave soldering techniques. power dissipation of greater than 0.8w is possible in a typical pcb mount application. 2/24/99 description l generation v technology l ultra low on-resistance l dual p-channel mosfet l surface mount l available in tape & reel l dynamic dv/dt rating l fast switching so-8 v dss = -55v r ds(on) = 0.105 w irf7342 www.irf.com 1 parameter max. units v ds drain- source voltage -55 v i d @ t c = 25c continuous drain current, v gs @ 10v -3.4 i d @ t c = 70c continuous drain current, v gs @ 10v -2.7 a i dm pulsed drain current ? -27 p d @t c = 25c power dissipation 2.0 p d @t c = 70c power dissipation 1.3 linear derating factor 0.016 w/c v gs gate-to-source voltage 20 v v gsm gate-to-source voltage single pulse tp<10s 30 v e as single pulse avalanche energy ? 114 dv/dt peak diode recovery dv/dt ? 5.0 v/ns t j, t stg junction and storage temperature range -55 to + 150 c parameter typ. max. units r q ja maximum junction-to-ambient ? CCC 62.5 c/w thermal resistance absolute maximum ratings w d1 d1 d2 d2 g1 s2 g2 s1 top view 8 1 2 3 4 5 6 7
irf7342 2 www.irf.com parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage -55 CCC CCC v v gs = 0v, i d = -250a d v (br)dss / d t j breakdown voltage temp. coefficient CCC -0.054 CCC v/c reference to 25c, i d = -1ma CCC 0.095 0.105 v gs = -10v, i d = -3.4a ? CCC 0.150 0.170 v gs = -4.5v, i d = -2.7a ? v gs(th) gate threshold voltage -1.0 CCC CCC v v ds = v gs , i d = -250a g fs forward transconductance 3.3 CCC CCC s v ds = -10v, i d = -3.1a CCC CCC -2.0 v ds = -55v, v gs = 0v CCC CCC -25 v ds = -55v, v gs = 0v, t j = 55c gate-to-source forward leakage CCC CCC -100 v gs = -20v gate-to-source reverse leakage CCC CCC 100 v gs = 20v q g total gate charge CCC 26 38 i d = -3.1a q gs gate-to-source charge CCC 3.0 4.5 nc v ds = -44v q gd gate-to-drain ("miller") charge CCC 8.4 13 v gs = -10v, see fig. 10 ? t d(on) turn-on delay time CCC 14 22 v dd = -28v t r rise time CCC 10 15 i d = -1.0a t d(off) turn-off delay time CCC 43 64 r g = 6.0 w t f fall time CCC 22 32 r d = 16 w , ? c iss input capacitance CCC 690 CCC v gs = 0v c oss output capacitance CCC 210 CCC pf v ds = -25v c rss reverse transfer capacitance CCC 86 CCC ? = 1.0mhz, see fig. 9 electrical characteristics @ t j = 25c (unless otherwise specified) i gss a w r ds(on) static drain-to-source on-resistance i dss drain-to-source leakage current na ns parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) showing the i sm pulsed source current integral reverse (body diode) ? p-n junction diode. v sd diode forward voltage CCC CCC -1.2 v t j = 25c, i s = -2.0a, v gs = 0v ? t rr reverse recovery time CCC 54 80 ns t j = 25c, i f = -2.0a q rr reverse recoverycharge CCC 85 130 nc di/dt = -100a/s ? source-drain ratings and characteristics CCC CCC CCC CCC -27 -2.0 a s d g ? repetitive rating; pulse width limited by max. junction temperature. ( see fig. 11 ) ? i sd -3.4a, di/dt -150a/s, v dd v (br)dss , t j 150c notes: ? starting t j = 25c, l = 20mh r g = 25 w , i as = -3.4a. (see figure 8) ? pulse width 300s; duty cycle 2%. ? when mounted on 1 inch square copper board, t<10 sec
irf7342 www.irf.com 3 0.1 1 10 100 0.1 1 10 100 20 s pulse width t = 25 c j top bottom vgs -15v -12v -10v -8.0v -6.0v -4.0v -3.5v -3.0v -v , drain-to-source voltage (v) -i , drain-to-source current (a) ds d -3.0v fig 3. typical transfer characteristics fig 2. typical output characteristics fig 1. typical output characteristics fig 4. typical source-drain diode forward voltage 0.1 1 10 100 0.1 1 10 100 20 s pulse width t = 150 c j top bottom vgs -15v -12v -10v -8.0v -6.0v -4.0v -3.5v -3.0v -v , drain-to-source volta g e (v) -i , drain-to-source current (a) ds d -3.0v 1 10 100 3 4 5 6 7 v = -25v 20s pulse width ds -v , gate-to-source volta g e (v) -i , drain-to-source current (a) gs d t = 25 c j t = 150 c j 0.1 1 10 100 0.2 0.4 0.6 0.8 1.0 1.2 1.4 -v ,source-to-drain volta g e (v) -i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j -4.5v -4.5v
irf7342 4 www.irf.com fig 5. normalized on-resistance vs. temperature fig 8. maximum avalanche energy vs. drain current fig 6. typical on-resistance vs. drain current fig 7. typical on-resistance vs. gate voltage 0 2 4 6 8 10 12 0.080 0.120 0.160 0.200 0.240 r , drain-to-source on resistance -i , drain current (a) d ds (on) vgs = -4.5v vgs = -10v ( w ) -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d -10v -3.4 a 25 50 75 100 125 150 0 50 100 150 200 250 300 startin g t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom -1.5a -2.7a -3.4a r ds(on) , drain-to-source on resistance ( w ) 0.05 0.15 0.25 0.35 0.45 2581114 a gs -v , gate-to-source voltage (v) i = -3.4 a d
irf7342 www.irf.com 5 0 10 20 30 40 0 4 8 12 16 20 q , total gate charge (nc) -v , gate-to-source voltage (v) g gs i = d -3.1a v = -12v ds v = -30v ds v = -48v ds fig 10. typical gate charge vs. gate-to-source voltage fig 9. typical capacitance vs. drain-to-source voltage fig 11. maximum effective transient thermal impedance, junction-to-ambient - 0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 100 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) 1 10 100 0 240 480 720 960 1200 -v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss g s g d , ds rss g d oss ds g d c iss c oss c rss
irf7342 6 www.irf.com so-8 package details k x 45 c 8x l 8x q h 0.25 (.010) m a m a 0.10 (.004) b 8x 0.25 (.010) m c a s b s - c - 6x e - b - d e - a - 8 7 6 5 1 2 3 4 5 6 5 recommended footprint 0.72 (.028 ) 8x 1.78 (.070) 8x 6.46 ( .255 ) 1.27 ( .050 ) 3x dim inch es m illim et ers m in m a x m in m ax a .0532 .0688 1.35 1.75 a1 .0040 .0098 0.10 0.25 b .014 .018 0.36 0.46 c .0075 .0098 0.19 0.25 d .189 .196 4.80 4.98 e .150 .157 3.81 3.99 e .050 ba sic 1.27 b asic e1 .025 ba sic 0.635 b as ic h .2284 .2440 5.80 6.20 k .011 .019 0.28 0.48 l 0.16 .050 0.41 1.27 q 0 8 0 8 notes: 1. dimensioning and tolerancing per ansi y14.5m-1982. 2. controlling dimension : inch. 3. d im en sion s a re sh ow n in millime te r s (in c he s). 4. ou tlin e con f orm s to jed e c ou tline ms -012aa . dimension does not include mold protrusions mold p r otr u sions n ot to exce ed 0.25 (.006). d ime ns ion s is th e le n gth of lea d for solde r in g to a su b stra te.. 5 6 a1 e1 q part marking
irf7342 www.irf.com 7 world headquarters: 233 kansas st., el segundo, california 90245, tel: (310) 322 3331 ir great britain: hurst green, oxted, surrey rh8 9bb, uk tel: ++ 44 1883 732020 ir canada: 15 lincoln court, brampton, ontario l6t3z2, tel: (905) 453 2200 ir germany: saalburgstrasse 157, 61350 bad homburg tel: ++ 49 6172 96590 ir italy: via liguria 49, 10071 borgaro, torino tel: ++ 39 11 451 0111 ir far east: k&h bldg., 2f, 30-4 nishi-ikebukuro 3-chome, toshima-ku, tokyo japan 171 tel: 81 3 3983 0086 ir southeast asia: 1 kim seng promenade, great world city west tower, 13-11, singapore 237994 tel: ++ 65 838 4630 ir taiwan: 16 fl. suite d. 207, sec. 2, tun haw south road, taipei, 10673, taiwan tel: 886-2-2377-9936 http://www.irf.com/ data and specifications subject to change without notice. 2/99 33 0.00 (12.992) max. 14.40 ( .566 ) 12.40 ( .488 ) notes : 1. controlling dimension : millimeter. 2. outline conform s to eia-481 & eia-541. feed direction terminal number 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) notes: 1. controlling dimension : millimeter. 2. all dimensions are show n in millimeters(inches). 3. outline conforms to eia-481 & eia-541. tape and reel
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